On Decreasing of Quantity of Radiation Defects in Working Area of an Integrated Circuit
Main Article Content
Abstract
In this paper, we introduce an approach to organize a drain of radiation defects, which were generated during ion doping and other types of radiation processing of the working area of integrated circuits, manufactured in the framework of a multilayer structure. The approach based on the difference of properties of materials of the layers of the considered multilayer structure. An analytical approach for analysis of mass and heat transfer in a multilayer structures was introduced with account the spatial and temporal variations of their parameters, as well as the nonlinearity of the processes under consideration.
Article Details
Section
Research Article
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.
This is an Open Access article distributed under the terms of the Attribution-Noncommercial 4.0 International License [CC BY-NC 4.0], which requires that reusers give credit to the creator. It allows reusers to distribute, remix, adapt, and build upon the material in any medium or format, for noncommercial purposes only.How to Cite
[1]
“On Decreasing of Quantity of Radiation Defects in Working Area of an Integrated Circuit”, ajcse, vol. 7, no. 03, Sep. 2022, doi: 10.22377/ajcse.v7i03.187.