On Decreasing of Quantity of Radiation Defects in Working Area of an Integrated Circuit
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Abstract
In this paper, we introduce an approach to organize a drain of radiation defects, which were generated during ion doping and other types of radiation processing of the working area of integrated circuits, manufactured in the framework of a multilayer structure. The approach based on the difference of properties of materials of the layers of the considered multilayer structure. An analytical approach for analysis of mass and heat transfer in a multilayer structures was introduced with account the spatial and temporal variations of their parameters, as well as the nonlinearity of the processes under consideration.
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